Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module
Author:
Affiliation:
1. Virginia Tech,Center for Power Electronics Systems (CPES),Arlington,VA,USA
2. Pennsylvania State University,Department of Electrical Engineering,University Park,PA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362060.pdf?arnumber=10362060
Reference8 articles.
1. Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
2. Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes
3. (Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future
4. 8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode
5. Static and dynamic characterization of a GaN-on-GaN 600 V, 2 a vertical transistor
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