Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base-Reference-Cited by-同舟云学术

Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base

Published:2015-05 Issue:5 Volume:36 Page:439-441
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gupta Geetak,Ahmadi Elaheh,Hestroffer Karine,Acuna Edwin,Mishra Umesh K.

Funder

Office of Naval Research, Arlington, VA, USA

National Science Foundation within the National Nanotechnology Infrastructure Network through the University of California at Santa Barbara Nanofabrication Facility

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7091972/07067388.pdf?arnumber=7067388

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