1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> Noise Characteristics of Surface-Treated Normally-Off Al<sub>2</sub>O<sub>3</sub>/GaN MOSFETs-Reference-Cited by-同舟云学术

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1/ $f$ Noise Characteristics of Surface-Treated Normally-Off Al₂O₃/GaN MOSFETs

Published:2015-03 Issue:3 Volume:36 Page:229-231
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sakong SungHwan,Lee Sang-Hyun,Rim Taiuk,Jo Young-Woo,Lee Jung-Hee,Jeong Yoon-Ha

Funder

IT Consilience Creative Program through NIPA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7046461/07017544.pdf?arnumber=7017544

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures;Semiconductor Science and Technology;2023-08-11

2. Design of normally-off p-GaN/AlGaN/GaN heterojunction field-effect transistors with re-grown AlGaN barrier;Journal of Crystal Growth;2023-04

3. New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs;Solid-State Electronics;2023-02

4. Thorough Investigation of Low Frequency Noise Mechanisms in AlGaN/GaN and Al₂O₃/GaN HEMTs;2021 IEEE International Electron Devices Meeting (IEDM);2021-12-11

5. Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer;Semiconductor Science and Technology;2021-11-15

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