Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Yuk K, Branner GR, Cui C. Future directions for GaN in 5G and satellite communications. In 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), Boston, MA, USA, Aug. 2017. pp. 803–806.
2. Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation;Takakura;IEEE Trans Electron Devices,2020
3. Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT;Nifa;Microelectron Eng,2019
4. Capacitance–Voltage Characteristics of Al2O3 /AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface;Mizue;Jpn J Appl Phys,2011
5. Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator;Zhao;Solid State Electron,2020
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