6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack-Reference-Cited by-同舟云学术

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6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Published:2015-04 Issue:4 Volume:36 Page:381-383
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Yun-Hsiang,Liang Yung C.,Samudra Ganesh S.,Huang Huolin,Huang Bo-Jhang,Huang Szu-Han,Chang Ting-Fu,Huang Chih-Fang,Kuo Wei-Hung,Lo Guo-Qiang

Funder

GaN-on-Si TSRP

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7064687/07044577.pdf?arnumber=7044577

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4. Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiNx GaN MISFET with In Situ H2/N2 Plasma Pretreatment;Electronics;2023-10-31

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