High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band Applications-Reference-Cited by-同舟云学术

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High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for $X$ -Band Applications

Published:2015-09 Issue:9 Volume:36 Page:899-901
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Eblabla A.,Li X.,Thayne I.,Wallis D. J.,Guiney I.,Elgaid K.

Funder

Pump-Priming Scheme–EPSRC National Centre for III–V Technologies

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7217862/07165603.pdf?arnumber=7165603

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics;Journal of Materials Science: Materials in Electronics;2024-05

2. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11

3. AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications;IEICE Transactions on Electronics;2022-10-01

4. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review;Micro and Nanostructures;2022-08

5. GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion;AIP Advances;2022-04-01

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