High RF Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique-Reference-Cited by-同舟云学术

High RF Performance Enhancement-Mode Al₂O₃/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

Published:2015-08 Issue:8 Volume:36 Page:754-756
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sen Huang ,Xinyu Liu ,Jinhan Zhang ,Ke Wei ,Guoguo Liu ,Xinhua Wang ,Yingkui Zheng ,Honggang Liu ,Zhi Jin ,Chao Zhao ,Cheng Liu ,Shenghou Liu ,Shu Yang ,Jincheng Zhang ,Yue Hao ,Chen Kevin J.

Funder

Innovation and Technology Commission, Hong Kong

National Natural Science Foundation of China

Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7164361/07123580.pdf?arnumber=7123580

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