Scaling Theory of Electrically Doped 2D Transistors-Reference-Cited by-同舟云学术

Scaling Theory of Electrically Doped 2D Transistors

Published:2015-07 Issue:7 Volume:36 Page:726-728
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ilatikhameneh Hesameddin,Klimeck Gerhard,Appenzeller Joerg,Rahman Rajib

Funder

Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation Program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7132642/07111272.pdf?arnumber=7111272

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