Author:
Ando Y.,Cappy A.,Marubashi K.,Onda K.,Miyamoto H.,Kuzuhara M.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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1. On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K;2024 103rd ARFTG Microwave Measurement Conference (ARFTG);2024-06-21
2. Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-30
3. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2005-02
4. ON THE NOISE RESISTANCE OF FIELD-EFFECT TRANSISTORS AT MICROWAVE FREQUENCIES;Fluctuation and Noise Letters;2001-09
5. Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics;GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)