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2. TCAD Investigation for Dual-Gate MISHEMT with Improved Linearity and Current Collapse for LNAs;IETE Technical Review;2021-11-21
3. GaN Based HEMT Power Amplifier Design with 44.5dBm Output Power Operating at 5-7GHz;Mehran University Research Journal of Engineering and Technology;2021-10-01
4. GaN Ku-band low-noise amplifier design including RF life test;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2015-04-20
5. Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2009-12