Systematic Analysis and Characterization of Extreme Failure for IGCT in MMC-HVdc System—Part I: Device Structure, Explosion Characteristics, and Optimization-Reference-Cited by-同舟云学术

Systematic Analysis and Characterization of Extreme Failure for IGCT in MMC-HVdc System—Part I: Device Structure, Explosion Characteristics, and Optimization

Published:2022-07 Issue:7 Volume:37 Page:8076-8086
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhou Wenpeng¹^ORCID,Zhao Biao¹^ORCID,Liu Jiapeng¹^ORCID,Chen Zhengyu¹^ORCID,Tang Xueteng²,Yu Zhanqing¹^ORCID,Wu Jinpeng¹,Zeng Rong¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Tsinghua University, Beijing, China

2. Energy Internet Research Institute, Tsinghua University, Beijing, China

Funder

National Natural Science Foundation of China

National Natural Science Foundation of China-State Grid Joint Fund for Smart Grid

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9743201/09695175.pdf?arnumber=9695175

Reference22 articles.

1. IGCT based modular multilevel converter for an ac-ac rail power supply;weiss;Proc Int Exhib Conf Power Electron Intell Motion Renewable Energy Energy Manage,0

2. A More Prospective Look at IGCT: Uncovering a Promising Choice for dc Grids

3. Integrated Gate Commutated Thyristor-Based Modular Multilevel Converters: A Promising Solution for High-Voltage dc Applications

4. Robust, Low-Loss RCIGCT Technology and MV Applications

5. Comparison of high-power IGBT's and hard-driven GTO's for high-power inverters

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