Review of Key Technologies in Modeling and Control of DC Transmission Systems Based on IGCT

Author:

Yao Degui1,Zhang Di1,Li Qiang1,Li Chenghao1,Gao Ze1,Yuan Zhichang2,Liu Kai3,Wang Xiangxu4,Kang Jianshuang5,Li Tingting6

Affiliation:

1. Electric Power Research Institute of State Grid Henan Electric Power Company, Zhengzhou 450017, China

2. Department of Electrical Engineering, Tsinghua University, Beijing 100084, China

3. NR Electric Co., Ltd., Nanjing 211102, China

4. China Electric Power Research Institute, Beijing 100192, China

5. DC Technology Center of State Grid Corporation of China, Beijing 100053, China

6. State Key Laboratory of Advanced Power Transmission Technology (State Grid Smart Grid Research Institute Co., Ltd.), Beijing 102200, China

Abstract

The integrated gate-commutated thyristor (IGCT) has the advantages of high voltage, high current, high reliability, and low manufacturing costs and has the potential to replace thyristor devices in the field of high-voltage direct current (HVDC) transmission. Over time, the development and manufacture of IGCT devices, drivers, and valve bodies have gradually matured, but the modeling and control technology of HVDC systems based on IGCT needs further research. This review aims to discuss the research status of key technologies of HVDC system modeling and control based on the IGCT in recent years, including the development of HVDC systems and the application potential of the IGCT, the efficient simulation and modeling technology of the IGCT HVDC system, and the key problems of HVDC system control technology based on the IGCT. At the same time, according to the author’s point of view, the existing problems and difficulties are extracted, and the next development ideas are clarified.

Funder

Science and technology projects of State Grid Corporation of China

Publisher

MDPI AG

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