A Method to Derive the Coupling Thermal Resistances at Junction-to-Case Level in Multichip Power Modules
Author:
Affiliation:
1. Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China
2. Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9952160/09903626.pdf?arnumber=9903626
Reference30 articles.
1. On the reproducibility of thermal measurements and of related thermal metrics in static and transient tests of power devices;farkas;Energies,2020
2. Influence of Thermal Coupling on Lifetime Under Power Cycling Test
3. Transient dual interface measurement — A new JEDEC standard for the measurement of the junction-to-case thermal resistance
4. Thermal transient characterization of semiconductor devices with multiple heat sources—Fundamentals for a new thermal standard
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