A Novel Multistage Gate Unit of Integrated Gate Commutated Thyristor-Reference-Cited by-同舟云学术

A Novel Multistage Gate Unit of Integrated Gate Commutated Thyristor

Published:2023-11 Issue:11 Volume:38 Page:13606-13611
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Shang Jie¹,Wu Jinpeng¹^ORCID,Zhao Biao¹^ORCID,Chen Zhengyu²^ORCID,Yu Zhanqing¹^ORCID,Wang Peng¹,Zeng Rong¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Tsinghua University, Beijing, China

2. DC Research Center, Sichuan Energy Internet Research Institute, Chengdu, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China-Young Scientists Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10261408/10225710.pdf?arnumber=10225710

Reference9 articles.

1. The internally commutated thyristor—A new GCT with integrated turn-off unit;koellensperger;Proc 4th Int Conf Integr Power Syst,2006

2. A 6500 A, 4500V, 94 mm Assymmetric IGCT;wikstroem;Proc Power Convers Intell Motion Europe Digit Days Int Exhib Conf Power Electron Intell Motion Renewable Energy Manage,2020

3. Experimental and numerical study of the emitter turn-off thyristor (ETO)

4. An IGCT Gate Unit for Zero-Voltage-Switching Resonant DC Transformer Applications

5. Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Investigation on the Turn-Off Failure Mechanism of IGCT;IEEE Transactions on Power Electronics;2024-10