Self-Reverse-Blocking Control of Dual-Gate Monolithic Bidirectional GaN Switch With Quasi-Ohmic on-State Characteristic
Author:
Affiliation:
1. Power Electronic Systems Laboratory, ETH Zurich, Zurich, Switzerland
2. Infineon Technologies Austria, Villach, Austria
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9780877/09745354.pdf?arnumber=9745354
Reference13 articles.
1. Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
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3. Modelling the closely-coupled cascode switching process
4. A new IGBT with reverse blocking capability;lindemann;Proc Eur Power Electron Appl Conf,0
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