Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse
Author:
Affiliation:
1. Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China
2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Beijing Natural Science Foundation
Beijing Municipal Commission of Education
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/63/10438896/10384782.pdf?arnumber=10384782
Reference29 articles.
1. Power Conversion With SiC Devices at Extremely High Ambient Temperatures
2. High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
3. Cascode GaN/SiC: A Wide-Bandgap Heterogenous Power Device for High-Frequency Applications
4. New generation 6.5 kV SiC power MOSFET
5. A 900A High Power Density and Low Inductive Full SiC Power Module for High Temperature Applications based on 900V SiC MOSFETs
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