Simultaneous Mitigation of Switching Overvoltage and Oscillation for SiC MOSFET via Gate Charge Injection Concept-Reference-Cited by-同舟云学术

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Simultaneous Mitigation of Switching Overvoltage and Oscillation for SiC MOSFET via Gate Charge Injection Concept

Published:2024-11 Issue:11 Volume:39 Page:14376-14386
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Sun Peng¹,Pan Xiaofei¹,Han Xudong²,Zheng Huayang¹,Liang Yuxi¹,Hu Yihua³^ORCID,Niu Fuli¹,Zeng Zheng¹^ORCID

Affiliation:

1. State Key Laboratory of Power Transmission Equipment Technology, School of Electrical Engineering, Chongqing University, Chongqing, China

2. State Grid Anhui Electric Power Company, Ltd., Construction Company, Hefei, China

3. Department of Engineering, King's College London, London, U.K.

Funder

National Natural Science Foundation of China

Chongqing Research Program of Basic Research and Frontier Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/63/10679334/10621663.pdf?arnumber=10621663

Reference28 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. Focuses and Concerns of Dynamic Test for Wide Bandgap Device: A Questionnaire-Based Survey

3. Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy

4. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

5. Motor Overvoltage Mitigation Using SiC-Based Zero-Voltage Switching Inverter

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