A Fully Integrated Heterogenous Si-CMOS/GaN 500 MHz 6 V-to-18 V Boost Converter Chip
Author:
Affiliation:
1. School of Integrated Circuits, Peking University, Beijing, China
2. School of Microelectronics, Tianjin University, Tianjin, China
3. Infineon, Neubiberg, Germany
Funder
National Natural Science Foundation of China
Tianjin Municipal Science and Technology Bureau
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10067244/10016651.pdf?arnumber=10016651
Reference16 articles.
1. Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-Ratio DC–DC Boost Converter IC
2. Integrated DC–DC boost converter with gallium nitride power transistor;disney,2017
3. A Fully Integrated Inductor-Based GaN Boost Converter With Self-Generated Switching Signal for Vehicular Applications
4. A Miniature 300-MHz Resonant DC–DC Converter With GaN and CMOS Integrated in IPD Technology
5. A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors
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