A Miniature 300-MHz Resonant DC–DC Converter With GaN and CMOS Integrated in IPD Technology-Reference-Cited by-同舟云学术

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A Miniature 300-MHz Resonant DC–DC Converter With GaN and CMOS Integrated in IPD Technology

Published:2018-11 Issue:11 Volume:33 Page:9656-9668
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Liu Ming-Jei,Hsu Shawn S. H.^ORCID

Funder

Ministry of Science and Technology, Government of the People’s Republic of Bangladesh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/8434364/08244301.pdf?arnumber=8244301

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1. Fractures of low-k materials in a RF package with integrated passive device based on TGV;Microelectronic Engineering;2024-08

2. A 100 MHz Class-E Converter with Switchable-Coupled-Inductor Control for Terahertz System;Springer Proceedings in Physics;2024

3. Research on Primary Side Control of Magnetic Coupled Radio Energy Transmission Based on DSP;2023 7th International Conference on Electrical, Mechanical and Computer Engineering (ICEMCE);2023-10-20

4. Evaluation of a Primary-Side Parameters-Agnostic Power Regulation Method on Different WPT Topologies;2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS);2023-08-06

5. A K-Band MMIC Cross-Coupled Oscillator With High Output Power in 0.25-μm GaN HEMT;IEEE Microwave and Wireless Technology Letters;2023-08

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