Improved Methodology for Parasitic Analysis of High-Performance Silicon Carbide Power Modules-Reference-Cited by-同舟云学术

Improved Methodology for Parasitic Analysis of High-Performance Silicon Carbide Power Modules

Published:2022-10 Issue:10 Volume:37 Page:12415-12425
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

DeBoi Brian T.¹^ORCID,Lemmon Andrew N.¹^ORCID,McPherson Brice²,Passmore Brandon²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL, USA

2. Wolfspeed, Fayetteville, AR, USA

Funder

Office of Naval Research

public release

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9803836/09780267.pdf?arnumber=9780267

Reference41 articles.

1. High-performance 300 kW 3-Phase SiC inverter based on next generation modular SiC power modules;feurtado;Proc Int Exhibit Conf Power Electron Intell Motion Renew Energy Energy Manage,0

2. A modular and scalable high-performance power module for silicon carbide devices;mcpherson;Proc Appl Power Electron Conf Expo,0

3. Introduction to AC/DC module;Doc comsol com,2021

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