Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes-Reference-Cited by-同舟云学术

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Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

Published:2021-10 Issue:10 Volume:36 Page:10959-10964
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Liu Jingcun^ORCID,Zhang Ruizhe^ORCID,Xiao Ming^ORCID,Pidaparthi Subhash^ORCID,Cui Hao,Edwards Andrew,Baubutr Lek^ORCID,Drowley Cliff,Zhang Yuhao^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9471017/09381681.pdf?arnumber=9381681

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization;IEEE Electron Device Letters;2024-08

2. GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications;IEEE Transactions on Electron Devices;2024-08

3. 0.58 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation;IEEE Electron Device Letters;2024-06

4. Dynamic R _ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01

5. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01

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