A Si-SiC Darlington Transistor Pair With Low Consumption-Reference-Cited by-同舟云学术

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A Si-SiC Darlington Transistor Pair With Low Consumption

Published:2024-06 Issue:6 Volume:39 Page:7109-7117
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Liao Linyuan¹^ORCID,Wu Zhenhui¹^ORCID,Yang Zhixiong¹^ORCID,Zeng Rongzhou¹^ORCID,Liang Jiaojiao¹^ORCID,Wang Jun²^ORCID,Shen Z. John³^ORCID

Affiliation:

1. College of Traffic Engineering, Hunan University of Technology, Zhuzhou, China

2. College of Electrical and Information Engineering, Hunan University, Changsha, China

3. School of Mechatronics Systems Engineering, Simon Fraser University, Surrey, BC, Canada

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10505873/10473111.pdf?arnumber=10473111

Reference24 articles.

1. Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

2. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

3. Mechanism of Threshold Voltage Instability in SiC MOSFETs and Impacts on Dynamic Switching

4. Evaluation of SiC BJTs for High-Power DC–DC Converters

5. Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter

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