Packaged $\beta$-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties-Reference-Cited by-同舟云学术

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Packaged $\beta$-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

Published:2022-04 Issue:4 Volume:37 Page:3737-3742
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Wilhelmi Florian^ORCID,Kunori Shinji,Sasaki Kohei^ORCID,Kuramata Akito,Komatsu Yuji,Lindemann Andreas

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9662450/09591274.pdf?arnumber=9591274

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-Low On-Resistance W/β-Ga₂O₃ Junction Barrier Schottky Rectifiers;ECS Advances;2024-09-02

2. Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact;AIP Advances;2024-09-01

3. Beta-Gallium Oxide Material and Device Technologies;Annual Review of Materials Research;2024-08-05

4. Switching of kV-class Ga2O3 heterojunction vertical rectifiers;Journal of Vacuum Science & Technology A;2024-08-01

5. Mo/Au β-Ga₂O₃ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications;IEEE Transactions on Electron Devices;2024-06

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