High Power X-Band Monolithic GaAs p-i-n Balanced Limiter
Author:
Affiliation:
1. School of Power and Mechanical Engineering, Wuhan University, Wuhan, China
2. Institute of Technological Sciences, Wuhan University, Wuhan, China
Funder
National Key R&D Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10046183/10002299.pdf?arnumber=10002299
Reference18 articles.
1. Designing reliable high-power limiter circuits with GaAs PIN diodes
2. Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier
3. The effect of frequency on the thermal effect of high power microwave pulses on a PIN limiter;xu;Proc Asia–Pac Symp Electromagn Compat,0
4. Damage accumulation mechanism in PIN diode limiters induced via multiple microwave pulses
5. Design of X-Band Miniature Balanced Limiter-Low Noise Amplifier Chip
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of temperature variation on the transient response of RF PIN diode limiters for very high frequency applications;IET Microwaves, Antennas & Propagation;2024-09-09
2. Corrections to “High Power X-band Monolithic GaAs PIN Balanced Limiter” [Apr 23 4623-4631];IEEE Transactions on Power Electronics;2023-09
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