Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier-Reference-Cited by-同舟云学术

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Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

Published:2019 Issue: Volume:7 Page:88275-88281
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Yang Lin^ORCID,Yang Lin-An,Rong Taotao,Li Yang,Jin Zhi,Hao Yue

Funder

Key Program of the National Natural Science Foundation of China

National Natural Science Foundation of China

National Natural Science Foundation for Young Scholars of China

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/8600701/08736967.pdf?arnumber=8736967

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ka-Band Ultra-Low Power GaAs MMIC LNA;Lecture Notes in Electrical Engineering;2023-11-29

2. Design Comparing of Monolithic Integrated Circuit a Single-Stage Transistor Amplifier with Integrated Power Limiter;2023 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF);2023-05-29

3. Design of a GaAs-Based Ka-Band Low Noise Amplifier MMIC with Gain Flatness Enhancement;Electronics;2023-05-21

4. High Power X-Band Monolithic GaAs p-i-n Balanced Limiter;IEEE Transactions on Power Electronics;2023-04

5. High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes;IEEE Microwave and Wireless Technology Letters;2023-02

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