Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications-Reference-Cited by-同舟云学术

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Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Published:2021-06 Issue:6 Volume:36 Page:6954-6966
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Qi Jinwei^ORCID,Yang Xu^ORCID,Li Xin^ORCID,Chen Wenjie^ORCID,Long Teng^ORCID,Tian Kai^ORCID,Hou Xiaodong,Wang Xuhui

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9346101/09246306.pdf?arnumber=9246306

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures;Micromachines;2024-06-09

2. Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse;Microelectronics Reliability;2024-04

3. A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET;Micromachines;2023-12-23

4. Avalanche Capability of SiC MOSFET Under High Current;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

5. Avalanche ruggedness and failure mode of SiC trench MOSFETs;Microelectronics Reliability;2023-11

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