A Novel Junction Temperature Estimation Method Independent of Bond Wire Degradation for IGBT
Author:
Affiliation:
1. Department of Electrical Engineering, Beihang University, Beijing, China
2. Department of Electrical Engineering, Tsinghua University, Beijing, China
Funder
National Key R&D Program of China
National Natural Science Foundation of China
China Postdoctoral Science Foundation
State Key Laboratory of Power System and Generation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10159462/10121605.pdf?arnumber=10121605
Reference36 articles.
1. Online junction temperature estimation for IGBT modules with paralleled semiconductor chips
2. Study and optimization of IGBT half-bridge module parasitic inductance;gu,2014
3. IGBT Junction Temperature Estimation via Gate Voltage Plateau Sensing
4. A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot
5. A thermo-sensitive electrical parameter with maximum dIC/dt during turn-off for high power Trench/Field-Stop IGBT modules
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1. Accuracy of IGBT Junction Temperature Prediction: An Improved Sailfish Algorithm to Optimize Support Vector Machine;IEEE Transactions on Power Electronics;2024-06
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3. An Online Monitoring Method for Bond Wire Fatigue in IGBT Module;IEEE Journal of the Electron Devices Society;2024
4. Diagnosis of IGBT Module Bond Wire Independent of Temperature Based on BP Neural Network;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
5. IGBT Junction Temperature Monitoring Method Current Calibration Free Based on the Narrow Pulse Injection;IEEE Transactions on Industrial Electronics;2023
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