Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
Key-Area Research and Development Program of Guangdong Province
Eaton Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10067244/10039687.pdf?arnumber=10039687
Reference41 articles.
1. A compact planar Rogowski coil current sensor for active current balancing of parallel-connected Silicon Carbide MOSFETs
2. Influence of Paralleling Dies and Paralleling Half-Bridges on Transient Current Distribution in Multichip Power Modules
3. A New Screening Method for Alleviating Transient Current Imbalance of Paralleled SiC MOSFETs
4. Active compensation of current unbalance in paralleled silicon carbide MOSFETs
5. Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules
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1. Simultaneous Mitigation of Switching Overvoltage and Oscillation for SiC MOSFET via Gate Charge Injection Concept;IEEE Transactions on Power Electronics;2024-11
2. An Active Gate Driver Control Scheme for Steady-State Current Balancing of Paralleled SiC MOSFETs;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09
3. A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling;IEEE Transactions on Power Electronics;2024-09
4. Current Source Gate Drivers: Topologies, Applications, and Future Research Needs;IEEE Transactions on Power Electronics;2024-09
5. Optimization Method of SiC MOSFET Switching Trajectory Based on Variable Current Drive;Electronics;2024-07-31
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