Switching Properties of 600 V Ga2O3 Diodes With Different Chip Sizes and Thicknesses
Author:
Affiliation:
1. Chair for Power Electronics, Otto von Guericke University Magdeburg, Magdeburg, Germany
2. ZF Japan Co. Ltd., Yokohama, Japan
3. Novel Crystal Technology Inc., Sayama, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10130046/10077760.pdf?arnumber=10077760
Reference34 articles.
1. Vertical β‐Ga 2 O 3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance
2. Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga2O3Vertical Geometry Rectifiers
3. Packaged $\beta$-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties
4. 1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
5. Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination
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1. Ultra-Low On-Resistance W/β-Ga2O3 Junction Barrier Schottky Rectifiers;ECS Advances;2024-09-02
2. Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact;AIP Advances;2024-09-01
3. Switching of kV-class Ga2O3 heterojunction vertical rectifiers;Journal of Vacuum Science & Technology A;2024-08-01
4. Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode;Applied Physics Letters;2024-04-22
5. A Review of β-Ga2O3 Power Diodes;Materials;2024-04-18
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