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Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process

  • Published:2023-03 Issue:3 Volume:38 Page:2827-2832
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Hao Bin1ORCID,Yang Yixuan1ORCID,Tang Xinling2,Zhao Zhibin1ORCID

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources, North China Electric Power University, Beijing, China

2. State Key Laboratory of Advanced Power Transmission Technology, Beijing Institute of Smart Energy, Beijing, China

Funder

Technology Project of State Grid Co., Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Benefits of Combining Gate-Field Plates Design and Hybrid Drains on Gold-Free GaN HEMT Devices;2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD);2024-07-02

2. Analytic Calculation Method of Power Loss for High Voltage and High Power IGBT Device;Lecture Notes in Electrical Engineering;2024

3. Improved HVIGBT Transient Modeling Method Based on Hefner Model;2023 2nd Asia Power and Electrical Technology Conference (APET);2023-12-28
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