Improved HVIGBT Transient Modeling Method Based on Hefner Model
Author:
Affiliation:
1. CCTEG CCTEG Taiyuan Research Institute Co., Ltd., Shanxi Tiandi Coal Mining Machinery Co., Ltd.,Taiyuan,China
2. CCTEG Shanxi Tiandi Coal Mining Machinery Co., Ltd., China National Engineering Laboratory for Coal Mining Machinery,Taiyuan,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10488911/10488919/10489260.pdf?arnumber=10489260
Reference15 articles.
1. A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications
2. Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process
3. An Improved Transient Model of High Voltage IGBT Based on Vector Fitting
4. A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology
5. An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
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