Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA
2. WolfSpeed, Raleigh, NC, USA
Funder
U.S. Department of Energy
Power America
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
https://ieeexplore.ieee.org/ielam/63/10413575/10349968-aam.pdf
Reference44 articles.
1. Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications
2. Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for Solid State Transformer (SST) application
3. Medium voltage solid state transformers based on 15 kV SiC MOSFET and JBS diode
4. 15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers
5. Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET
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