A Novel Piezoresistive Pressure Sensor Based on Cr-doped V<sub>2</sub>O<sub>3</sub> Thin Film-Reference-Cited by-同舟云学术

A Novel Piezoresistive Pressure Sensor Based on Cr-doped V₂O₃ Thin Film

Published:2023-01-15 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)
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Author:

Gidts Michiel¹,Hsu Wei-Fan¹,Payo Maria Recaman¹,Kushwaha Shashwat¹,Wang Chen¹,Ceyssens Frederik¹,Reynaerts Dominiek¹,Locquet Jean-Pierre¹,Kraft Michael¹

Affiliation:

1. KU Leuven,Leuven,Belgium,B-3000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10052111/10052113/10052552.pdf?arnumber=10052552

Reference19 articles.

1. Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy

2. Collapse of the low temperature insulating state in Cr-doped V2O3 thin films

3. Characterization of pulsed laser deposition grown V2O3 converted VO2;majid;Journal of Physics Conference Series,2016

4. Optical and electrical performance of thermochromic V2O3 thin film fabricated by magnetron sputtering

5. Structure, properties, and MEMS and microelectronic applications of vanadium oxides

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