Characterization of pulsed laser deposition grown V2O3converted VO2
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/755/i=1/a=012027/pdf
Reference10 articles.
1. Unraveling Metal-insulator Transition Mechanism of VO2Triggered by Tungsten Doping
2. Photoemission evidence for crossover from Peierls-like to Mott-like transition in highly strained VO2
3. Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
4. Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals
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4. Metal–Insulator Transitions in Stable V 2 O 3 Thin Films: Atomic Layer Deposition and Postdeposition Annealing Studies;physica status solidi (RRL) – Rapid Research Letters;2021-03-05
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