Unraveling Metal-insulator Transition Mechanism of VO2Triggered by Tungsten Doping-Reference-Cited by-同舟云学术

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Unraveling Metal-insulator Transition Mechanism of VO2Triggered by Tungsten Doping

Published:2012-06-22 Issue:1 Volume:2 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Tan Xiaogang,Yao Tao,Long Ran,Sun Zhihu,Feng Yajuan,Cheng Hao,Yuan Xun,Zhang Wenqing,Liu Qinghua,Wu Changzheng,Xie Yi,Wei Shiqiang

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep00466.pdf

Reference33 articles.

1. Imada, M., Fujimori, A. & Tokura, Y. Metal-insulator transitions. Rev. Mod. Phys. 70, 1039–1263 (1998).

2. Cao, J. et al. Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams. Nat. Nanotechnol. 4, 732–737 (2009).

3. Wei, J., Wang, Z. H., Chen, W. & Cobden, D. H. New aspects of the metal-insulator transition in single-domain vanadium dioxide nanobeams. Nat. Nanotechnol. 4, 420–424 (2009).

4. Liu, W. T. et al. Intrinsic Optical Properties of Vanadium Dioxide near the Insulator-Metal Transition. Nano Lett. 11, 466–470 (2010).

5. Driscoll, T. et al. Memory Metamaterials. Science 325, 1518–1521 (2009).

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