Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory-Reference-Cited by-同舟云学术

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Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

Published:2012-05 Issue: Volume: Page:
ISSN:
Container-title:2012 4th IEEE International Memory Workshop
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Author:

Boniardi Mattia,Redaelli Andrea,Tortorelli Innocenzo,Lavizzari Simone,Pirovano Agostino,Pellizzer Fabio,Varesi Enrico,Erbetta Davide,Bresolin Camillo,Modelli Alberto,Bez Roberto

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6213613/6213616/06213679.pdf?arnumber=6213679

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories;IEEE Transactions on Electron Devices;2023-03

3. Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

4. Electrical and structural properties of binary Ga–Sb phase change memory alloys;Journal of Applied Physics;2022-07-21

5. Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory;Nanotechnology;2020-03-10

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