The kinetics of degradation of data retention of post-cycled nrom non-volatile memory products-Reference-Cited by-同舟云学术

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The kinetics of degradation of data retention of post-cycled nrom non-volatile memory products

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Container-title:2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.
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Author:

Janai M.,Eitan B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9994/32106/01493080.pdf?arnumber=1493080

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Characterization Method for Lateral Profiling of Interface Traps and Trapped Charges in P-SONOS Cell Devices;IEEE Transactions on Device and Materials Reliability;2017-03

2. Threshold Voltage Instability Mechanisms of Nitride Based Charge Trap Flash Memory—A Review;Journal of Nanoscience and Nanotechnology;2014-07-01

3. The Impact of Tunnel Oxide Nitridation to Reliability Performance of Charge Storage Non-Volatile Memory Devices;Journal of Nanoscience and Nanotechnology;2014-02-01

4. Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices;IEEE Transactions on Electron Devices;2013-10

5. An improved multilevel cell programming technique for 4-bits/cell localized trapping SONOS memory devices;Microelectronics Reliability;2013-01

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