Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET-Reference-Cited by-同舟云学术

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Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET

Published:2007-09 Issue: Volume: Page:
ISSN:0197-2618
Container-title:2007 IEEE Industry Applications Annual Meeting
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Author:

Treu M.,Rupp R.,Blaschitz P.,Ruschenschmidt K.,Sekinger Th.,Friedrichs P.,Elpelt R.,Peters D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4347748/4347749/04347805.pdf?arnumber=4347805

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic R _ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01

2. Fast Chargers for Plug-In Electric and Hybrid Vehicles;Green Energy and Technology;2024

3. Methodologies of Cascading to Realize High-Voltage Cascaded Super Cascode Power Switch;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-12

4. A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability;IEEE Transactions on Device and Materials Reliability;2023-12

5. Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications;IEEE Transactions on Industry Applications;2023-03

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