First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication-Reference-Cited by-同舟云学术

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First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication

Published:2024-06-16 Issue: Volume:68 Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Rheem Nahyun¹,Jeong Jaeyong¹,Suh Yoon-Je¹,Lee Chan Jik¹,Kim Bong Ho¹,Kim Joon Pyo¹,Kim Seong Kwang¹,Lim Hyeongrak¹,Kim Jongmin²,Ahn Dae-Hwan³,Han Jae-Hoon³,Lee Jongwon⁴,Kim Sanghyeon¹

Affiliation:

1. School of Electrical Engineering, KAIST,Daejeon,Korea

2. KANC,Suwon,Korea

3. Center for Opto-Electronics Materials and Devices, KIST,Seoul,Korea

4. Chungnam National University,Department of Semiconductor Convergence,Daejeon,Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631404.pdf?arnumber=10631404

Reference13 articles.

1. Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

2. Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs

3. Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits

4. Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

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