High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with V<sub>TH</sub> Tunability for Future Memories-Reference-Cited by-同舟云学术

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High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with V_TH Tunability for Future Memories

Published:2022-06-12 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Ritzenthaler R.¹,Capogreco E.¹,Dupuy E.¹,Arimura H.¹,Bastos J. P.¹,Favia P.¹,Sebaai F.¹,Radisic D.¹,Nguyen V. T. H.¹,Mannaert G.¹,Chan B. T.¹,Machkaoutsan V.²,Yoon Y.³,Itokawa H.⁴,Yamaguchi M.⁴,Chen Y.⁵,Fazan P.²,Subramanian S.¹,Spessot A.¹,Dentoni Litta E.¹,Samavedam S.¹,Horiguchi N.¹

Affiliation:

1. imec,Leuven,Belgium,B-3001

2. Micron,imec

3. SK-Hynix,imec

4. Kioxia,imec

5. Western Digital,imec

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830186.pdf?arnumber=9830186

Reference7 articles.

1. JJAP;spessot;SBBB06,2021

2. patent US 9,245,759 B2,0

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1. Advanced Thermal Control Using Chip Cooling Laminate Chip (CCLC) with Finite Element Method for System-in-Package (SiP) Technology;Electronics;2023-07-20

2. Chemical states of PVD-ZrS₂ film underneath scaled high-k film with self-oxidized ZrO₂ film as interfacial layer;Japanese Journal of Applied Physics;2023-01-09

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