0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/36104/01715452.pdf?arnumber=1715452
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of the ultra-short T-shaped gate profile controlled by the sensitivity difference in bilayer resists;Microelectronic Engineering;2020-04
2. Enhancement-Mode High Electron Mobility Transistor on SiC Substrate with T-Gate Field Plate for High Power Applications;Springer Proceedings in Physics;2019
3. Hetero-epitaxy of L g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications;Chinese Physics B;2015-08
4. Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD;Chinese Physics B;2015-06-25
5. Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals;Materials Science in Semiconductor Processing;2015-02
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