Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

Author:

Nhut Tan D.1,Bonen Shai2,Cooke Gregory2,Jager Thomas2,Spasaro Michele1,Sufra Dario1,Voinigescu Sorin P.2,Zito Domenico1

Affiliation:

1. Aarhus University,Dept. of Electrical and Computer Engineering,Denmark

2. University of Toronto,Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering,Canada

Publisher

IEEE

Reference14 articles.

1. Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications

2. DC-40 GHz SPDTs in 22 nm FD-SOI and Back-Gate Impact Study

3. Fully Depleted SOl RF Switch with Dynamic Biasing;chen;IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,0

4. A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch

5. On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOl-CMOS technology;cardoso;SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),0

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Compact TIA in 22nm FDSOI CMOS for Qubit Readout in Monolithic Quantum Processors;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04

2. A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-10

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