A DC-170 GHz InP Distributed Amplifier Using Transmission Line Loss Compensation Technique
Author:
Affiliation:
1. University of California,Microwave Microsystems Laboratory,Davis,USA
2. Keysight Technologies,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865541.pdf?arnumber=9865541
Reference14 articles.
1. A High Output Power 1 – 150 GHz Distributed Power Amplifier in InP HBT Technology
2. A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS
3. An Ultra Compact Watt-Level Ka-Band Stacked-FET Power Amplifier
4. A 28-GHz Symmetrical Doherty Power Amplifier Using Stacked-FET Cells
5. A Wideband SiGe Power Amplifier Using Modified Triple Stacked-HBT Cell
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1. A 10–230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs;IEEE Microwave and Wireless Technology Letters;2024-06
2. Optimization study of stochastic process and probabilistic model for line loss management efficiency in low-voltage station areas;Applied Mathematics and Nonlinear Sciences;2024-01-01
3. A 182 GHz Triple-Stacked Distributed Amplifier in InP HBT Process;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. Evolution of Broadband Amplifier Design: From Single-Stage to Distributed Topology;IEEE Microwave Magazine;2023-09
5. A 7–115-GHz Distributed Amplifier With 24-dBm Output Power Using Quadruple-Stacked HBT in InP;IEEE Microwave and Wireless Technology Letters;2023-06
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