Impact of extrinsic capacitances on FinFETs RF performance
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6156879/6160115/06160141.pdf?arnumber=6160141
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Parasitic Capacitance Model for Stacked Gate-All-Around Nanosheet FETs;IEEE Transactions on Electron Devices;2024-01
2. An insight to the performance of vertical super-thin body (VSTB) FET in presence of interface traps and corresponding noise and RF characteristics;Applied Physics A;2019-11-26
3. Design and Study of performance of nano-scale FINFETs with reduced switching energy using spacer optimization;2015 International Conference on Electrical, Electronics, Signals, Communication and Optimization (EESCO);2015-01
4. A comprehensive review on microwave FinFET modeling for progressing beyond the state of art;Solid-State Electronics;2013-02
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