UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition-Reference-Cited by-同舟云学术

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UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition

Published:2010-02 Issue:2 Volume:46 Page:265-271
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Chen Hsing-Chao,Chen Miin-Jang,Wu Mong-Kai,Li Wei-Chih,Tsai Hung-Ling,Yang Jer-Ren,Kuan Hon,Shiojiri Makoto

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/5353810/05361387.pdf?arnumber=5361387

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Highly Efficient Dual-Band Photodetector Performance of Spin-on-Doping (SOD) Grown p-Type Phosphorus Doped ZnO (P:ZnO)/n-Ga$_{\text{2}}$O$_{\text{3}}$ Heterojunction Device;IEEE Transactions on Electron Devices;2023

2. Formation Mechanism and Bandgap Reduction of GaN–ZnO Solid‐Solution Thin Films Fabricated by Nanolamination of Atomic Layer Deposition;Advanced Materials;2023-01

3. Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure;Materials Research Express;2021-12-01

4. Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes;IEEE Transactions on Electron Devices;2019-11

5. Review Article: Atomic layer deposition of doped ZnO films;Journal of Vacuum Science & Technology A;2019-09

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