Single-Event Effects Response of 96- and 176-Layer 3D NAND Flash Memories
Author:
Affiliation:
1. NASA Goddard Space Flight Center,Greenbelt,MD,USA,20771
2. SSAI, Inc.,NASA Goddard Space Flight Center,Greenbelt,MD,USA,20771
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10265810/10265811/10265834.pdf?arnumber=10265834
Reference11 articles.
1. 88-Inch Cyclotron: The one-stop facility for electronics radiation testing
2. Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory
3. A Five-Year Compendium of Proton Test Usage Patterns at the Francis H. Burr Proton Therapy Center
4. Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories
5. Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate Technology
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