Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer-Reference-Cited by-同舟云学术

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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 Symposium on VLSI Technology (VLSIT)
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Author:

Han Genquan,Su Shaojian,Wang Lanxiang,Wang Wei,Gong Xiao,Yang Yue,Ivana ,Guo Pengfei,Guo Cheng,Zhang Guangze,Pan Jisheng,Zhang Zheng,Xue Chunlai,Cheng Buwen,Yeo Yee-Chia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6235083/6242429/06242479.pdf?arnumber=6242479

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical GeSn nanowire MOSFETs for CMOS beyond silicon;Communications Engineering;2023-02-25

2. A Germanium Based Quantum Well Complementary Metal-Oxide-Semiconductor Transistor;Journal of Nanoelectronics and Optoelectronics;2022-09-01

3. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications;Nanomaterials;2021-09-29

4. Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain;IEEE Electron Device Letters;2021-01

5. Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge;Optics & Laser Technology;2020-08

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