Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width-Reference-Cited by-同舟云学术

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Strain-induced performance enhancement of tri-gate and omega-gate nanowire FETs scaled down to 10nm Width

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 Symposium on VLSI Technology (VLSIT)
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Author:

Coquand R.,Casse M.,Barraud S.,Leroux P.,Cooper D.,Vizioz C.,Comboroure C.,Perreau P.,Maffini-Alvaro V.,Tabone C.,Tosti L.,Allain F.,Barnola S.,Delaye V.,Aussenac F.,Reimbold G.,Ghibaudo G.,Munteanu D.,Monfray S.,Boeuf F.,Faynot O.,Poiroux T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6235083/6242429/06242437.pdf?arnumber=6242437

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