Three-dimensional stress engineering in FinFETs for mobility/on-current enhancement and gate current reduction
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4573020/4588540/04588547.pdf?arnumber=4588547
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. FinFET to GAA MBCFET: A Review and Insights;IEEE Access;2024
2. Analysis and Modeling of an 11.8 GHz Fin Resonant Body Transistor in a 14 nm FinFET CMOS Process;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2022-04
3. Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design;IEEE Access;2022
4. Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs;Applied Physics Express;2015-11-30
5. Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate;Japanese Journal of Applied Physics;2014-04-16
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