Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design-Reference-Cited by-同舟云学术

Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design

Published:2022 Issue: Volume:10 Page:64388-64407
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Hudeczek Richard¹^ORCID,Hager Ehrentraud²^ORCID,Baumgartner Peter³^ORCID,Pretl Harald⁴^ORCID

Affiliation:

1. Department of Electrical Engineering and Information Technology, Technical University of Munich, Munich, Germany

2. Christian Doppler Laboratory for Digitally Assisted RF Transceivers for Future Mobile Communications, Johannes Kepler University (JKU) Linz, Linz, Austria

3. Intel, Neubiberg, Germany

4. Institute for Integrated Circuits, Johannes Kepler University (JKU) Linz, 4040 Linz, Austria

Funder

Austrian Federal Ministry for Digital and Economic Affairs;

Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung

Christian Doppler Research Association

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09795011.pdf?arnumber=9795011

Reference80 articles.

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4. Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

5. UHF acoustic attenuation and quality parameter limits in the diamond based HBAR

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